- Hersteller：
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- Operating Temperature：
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- Features：
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- Voltage - Supply：
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- Current - Quiescent (Max)：
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- Logic Type：
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- Current - Output High, Low：
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- Max Propagation Delay @ V, Max CL：
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- Logic Level - Low：
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- Logic Level - High：
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2,178 Aufzeichnungen
| Bild | Teil | Hersteller | Beschreibung | MOQ | Aktie | Aktion | |
|---|---|---|---|---|---|---|---|
|
Texas Instruments | IC INVERTER OPEN... |
1 |
138,780
In-stock
|
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|
|
Rochester Electronics | IC GATE AND OPEN ... |
1,697 |
96,200
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|
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|
|
Rochester Electronics | IC GATE NOR 4CH 2-I... |
1,697 |
90,210
In-stock
|
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|
|
onsemi | IC INVERTER 6CH 6-... |
1 |
24,100
In-stock
|
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|
|
Rochester Electronics | IC GATE NOR 3CH 3-I... |
1,697 |
61,990
In-stock
|
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|
|
Toshiba Electronic Devices and Storage Corporation | IC GATE AND 4CH 2-I... |
1 |
24,970
In-stock
|
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|
|
Texas Instruments | IC GATE NAND 3CH 3... |
1 |
24,040
In-stock
|
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|
|
Texas Instruments | IC GATE OR SCHMIT... |
1 |
22,980
In-stock
|
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|
|
Rochester Electronics | IC GATE NOR 4CH 2-I... |
1,697 |
28,090
In-stock
|
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|
|
Texas Instruments | IC GATE NOR 4CH 2I... |
1 |
18,720
In-stock
|
Erhalten Sie Zitat | ||
|
|
Texas Instruments | IC GATE NAND 4CH 2... |
1 |
17,550
In-stock
|
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|
|
Rochester Electronics | IC GATE OR 4CH 2-IN... |
1,603 |
80,000
In-stock
|
Erhalten Sie Zitat | ||
|
|
Rochester Electronics | IC GATE XNOR 4CH 2... |
1,603 |
80,000
In-stock
|
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|
|
Rochester Electronics | IC GATE NAND OPEN... |
1,603 |
2,550,000
In-stock
|
Erhalten Sie Zitat | ||
|
|
Texas Instruments | IC GATE NOR 4CH 2I... |
1 |
10,910
In-stock
|
Erhalten Sie Zitat | ||
|
|
Rochester Electronics | IC GATE XNOR 4CH 2... |
1,603 |
50,000
In-stock
|
Erhalten Sie Zitat | ||
|
|
Rochester Electronics | IC GATE NOR 4CH 2-I... |
1,603 |
42,720
In-stock
|
Erhalten Sie Zitat | ||
|
|
onsemi | IC GATE OR 4CH 2-IN... |
1 |
19,500
In-stock
|
Erhalten Sie Zitat | ||
|
|
Rochester Electronics | IC GATE XOR 4CH 2-I... |
1,603 |
30,800
In-stock
|
Erhalten Sie Zitat | ||
|
|
Rochester Electronics | IC GATE AND 4CH 2-I... |
1,603 |
25,000
In-stock
|
Erhalten Sie Zitat |