MBR400100CT

Herst.Teilenummer
MBR400100CT
Hersteller
GeneSiC Semiconductor
Paket/Fall
-
Datenblatt
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Beschreibung
DIODE MODULE 100V 200A 2TOWER
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Hersteller :
GeneSiC Semiconductor
Produktkategorie :
Dioden - Gleichrichter - Arrays
Current - Average Rectified (Io) (per Diode) :
200A
Current - Reverse Leakage @ Vr :
5 mA @ 20 V
Diode Configuration :
1 Pair Common Cathode
Diode Type :
Schottky
Mounting Type :
Chassis Mount
Operating Temperature - Junction :
-55°C ~ 150°C
Package / Case :
Twin Tower
Part Status :
Active
Reverse Recovery Time (trr) :
-
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package :
Twin Tower
Voltage - DC Reverse (Vr) (Max) :
100 V
Voltage - Forward (Vf) (Max) @ If :
840 mV @ 200 A
Datenblätter
MBR400100CT

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