W989D6DBGX6E

Herst.Teilenummer
W989D6DBGX6E
Hersteller
Winbond Electronics Corporation
Paket/Fall
-
Datenblatt
Download
Beschreibung
512MB LPSDR, X16, 166MHZ, 46NM
* Menge

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Hersteller :
Winbond Electronics Corporation
Produktkategorie :
Speicher
Access Time :
5 ns
Clock Frequency :
166 MHz
Memory Format :
DRAM
Memory Interface :
LVCMOS
Memory Size :
512Mb (32M x 16)
Memory Type :
Volatile
Mounting Type :
Surface Mount
Operating Temperature :
-25°C ~ 85°C (TC)
Package / Case :
54-TFBGA
Part Status :
Active
Supplier Device Package :
54-VFBGA (8x9)
Technology :
SDRAM - Mobile LPSDR
Voltage - Supply :
1.7V ~ 1.95V
Write Cycle Time - Word, Page :
15ns
Datenblätter
W989D6DBGX6E

Herstellerbezogene Produkte

  • Winbond Electronics Corporation
    IC FLASH 2MBIT SPI 104MHZ 8SOIC
  • Winbond Electronics Corporation
    IC FLASH 2MBIT SPI 104MHZ 8USON
  • Winbond Electronics Corporation
    IC FLASH 8MBIT SPI 104MHZ 8SOIC
  • Winbond Electronics Corporation
    IC FLASH 4MBIT SPI 104MHZ 8SOIC
  • Winbond Electronics Corporation
    IC FLASH 8MBIT SPI 104MHZ 8USON

Katalogbezogene Produkte

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