1N914A
- Herst.Teilenummer
- 1N914A
- Hersteller
- Rochester Electronics
- Paket/Fall
- -
- Datenblatt
- Download
- Beschreibung
- ZENER DIODE
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- Hersteller :
- Rochester Electronics
- Produktkategorie :
- Dioden - Gleichrichter - Single
- Capacitance @ Vr, F :
- 4pF @ 0V, 1MHz
- Current - Average Rectified (Io) :
- 200mA
- Current - Reverse Leakage @ Vr :
- 5 µA @ 75 V
- Diode Type :
- Standard
- Mounting Type :
- Through Hole
- Operating Temperature - Junction :
- 175°C (Max)
- Package / Case :
- DO-204AH, DO-35, Axial
- Part Status :
- Obsolete
- Reverse Recovery Time (trr) :
- 4 ns
- Speed :
- Small Signal =< 200mA (Io), Any Speed
- Supplier Device Package :
- DO-35 (DO-204AH)
- Voltage - DC Reverse (Vr) (Max) :
- 100 V
- Voltage - Forward (Vf) (Max) @ If :
- 1 V @ 20 mA
- Datenblätter
- 1N914A
Herstellerbezogene Produkte
Katalogbezogene Produkte
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Teil | Hersteller | Aktie | Beschreibung |
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1N914 | Microchip Technology | 39,980 | DIODE GEN PURP 75V 200MA DO35 |
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1N914 | NTE Electronics, Inc. | 105,370 | D-SI 100V 200MA DO-35 |
1N914 | TubeDepot | 50,000 | DIODE FAST SIGNAL 300MA/100V |
1N914 | onsemi | 50,000 | DIODE GEN PURP 100V 200MA DIE |
1N914 BK TIN/LEAD | Central Semiconductor | 24,840 | THROUGH-HOLE-DIODE-SWITCH |
1N914-T50A | onsemi | 177,150 | DIODE GEN PURP 100V 200MA DO35 |
1N914-TP | Micro Commercial Components (MCC) | 50,000 | DIODE GEN PURP 100V 200MA DO35 |
1N914A | NTE Electronics, Inc. | 35,270 | D-SI 100PRV .02A |
1N914A | onsemi | 50,000 | DIODE GEN PURP 100V 200MA DO35 |
1N914A-TP | Micro Commercial Components (MCC) | 50,000 | DIODE 500MW HIGH SPEED DO-35 |
1N914ATR | onsemi | 742,490 | DIODE GEN PURP 100V 200MA DO35 |
1N914A_T50R | onsemi | 50,000 | DIODE GEN PURP 100V 200MA DO35 |
1N914B | onsemi | 629,270 | DIODE GEN PURP 100V 200MA DO35 |
1N914B | NTE Electronics, Inc. | 92,320 | DIODE GEN PURP 100V 200MA DO35 |