BAV102,115
- Herst.Teilenummer
- BAV102,115
- Hersteller
- Rochester Electronics
- Paket/Fall
- -
- Datenblatt
- Download
- Beschreibung
- NEXPERIA BAV102 - RECTIFIER DIOD
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- Hersteller :
- Rochester Electronics
- Produktkategorie :
- Dioden - Gleichrichter - Single
- Capacitance @ Vr, F :
- 5pF @ 0V, 1MHz
- Current - Average Rectified (Io) :
- 250mA (DC)
- Current - Reverse Leakage @ Vr :
- 100 nA @ 150 V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- 175°C (Max)
- Package / Case :
- DO-213AC, MINI-MELF, SOD-80
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 50 ns
- Speed :
- Fast Recovery =< 500ns, > 200mA (Io)
- Supplier Device Package :
- LLDS; MiniMelf
- Voltage - DC Reverse (Vr) (Max) :
- 150 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.25 V @ 200 mA
- Datenblätter
- BAV102,115
Herstellerbezogene Produkte
Katalogbezogene Produkte
Verwandte Produkte
Teil | Hersteller | Aktie | Beschreibung |
---|---|---|---|
BAV100 | Diotec Semiconductor | 25,000 | DIODE SFR DO-213AA 60V 0.2A |
BAV100 | DComponents | 50,000 | SF Rect, 60V, 0.20A, 50ns |
BAV100-GS08 | Vishay | 82,670 | DIODE GEN PURP 50V 250MA SOD80 |
BAV100-GS18 | Vishay | 50,000 | DIODE GEN PURP 50V 250MA SOD80 |
BAV101 | Diotec Semiconductor | 25,000 | DIODE SFR DO-213AA 110V 0.2A |
BAV101 | DComponents | 50,000 | SF Rect, 110V, 0.20A, 50ns |
BAV101 L0G | Taiwan Semiconductor | 50,000 | DIODE GP 250V 200MA MINIMELF |
BAV101 L1G | Taiwan Semiconductor | 50,000 | DIODE GP 250V 200MA MINIMELF |
BAV101-GS08 | Vishay | 50,000 | DIODE GEN PURP 100V 250MA SOD80 |
BAV101-GS18 | Vishay | 50,000 | DIODE GEN PURP 100V 250MA SOD80 |
BAV102 | onsemi | 82,690 | DIODE GEN PURP 150V 200MA LL34 |
BAV102 | Rochester Electronics | 50,000 | RECTIFIER DIODE, 0.2A, 100V |
BAV102 | DComponents | 50,000 | SF Rect, 200V, 0.20A, 50ns |
BAV102,115 | Nexperia | 50,000 | DIODE GEN PURP 150V 250MA LLDS |
BAV102,115 | Rochester Electronics | 50,000 | DIODE SWITCHING 150V 0.25A LLDS |