RS1MDF-13
- Herst.Teilenummer
- RS1MDF-13
- Hersteller
- Diodes Incorporated
- Paket/Fall
- -
- Datenblatt
- Download
- Beschreibung
- DIODE GEN PURP 1KV 1A DFLAT
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- Hersteller :
- Diodes Incorporated
- Produktkategorie :
- Dioden - Gleichrichter - Single
- Capacitance @ Vr, F :
- 5pF @ 4V, 1MHz
- Current - Average Rectified (Io) :
- 1A
- Current - Reverse Leakage @ Vr :
- 5 µA @ 1000 V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -55°C ~ 150°C
- Package / Case :
- 2-SMD, Flat Lead
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 500 ns
- Speed :
- Standard Recovery >500ns, > 200mA (Io)
- Supplier Device Package :
- D-Flat
- Voltage - DC Reverse (Vr) (Max) :
- 1000 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.3 V @ 1 A
- Datenblätter
- RS1MDF-13
Herstellerbezogene Produkte
Katalogbezogene Produkte
Verwandte Produkte
Teil | Hersteller | Aktie | Beschreibung |
---|---|---|---|
RS1M | onsemi | 309,460 | DIODE GEN PURP 1KV 1A SMA |
RS1M | NextGen Components | 55,880,000 | Fast Recovery SMA 1KV 1A |
RS1M M2G | Taiwan Semiconductor | 50,000 | DIODE GEN PURP 1A DO214AC |
RS1M R3G | Taiwan Semiconductor | 50,000 | DIODE GEN PURP 1KV 1A DO214AC |
RS1M-13 | Diodes Incorporated | 50,000 | DIODE GEN PURP 1KV 1A SMA |
RS1M-13-F | Diodes Incorporated | 1,173,230 | DIODE GEN PURP 1KV 1A SMA |
RS1M-HF | Comchip Technology | 50,000 | RECTIFIER FAST RECOVERY 1000V 1A |
RS1MAL M3G | Taiwan Semiconductor | 38,160 | 500NS, 1A, 1000V, FAST RECOVERY |
RS1MB-13 | Diodes Incorporated | 50,000 | DIODE GEN PURP 1KV 1A SMB |
RS1MB-13-F | Diodes Incorporated | 1,377,620 | DIODE GEN PURP 1KV 1A SMB |
RS1MB-13-G | Diodes Incorporated | 50,000 | DIODE GENERAL PURPOSE SMB |
RS1MDFQ-13 | Diodes Incorporated | 97,460 | DIODE GEN PURP 1KV 1A DFLAT |
RS1MFA | onsemi | 51,630 | DIODE GP 1KV 800MA SOD123FA |
RS1MFP | onsemi | 50,000 | DIODE GP 1000V 1.2A SOD123HE |
RS1MFP | Rochester Electronics | 50,000 | RECTIFIER DIODE, 1.2A, 1000V |