HZM10NB1TR-E
- Herst.Teilenummer
- HZM10NB1TR-E
- Hersteller
- Rochester Electronics
- Paket/Fall
- -
- Datenblatt
- Download
- Beschreibung
- DIODE ZENER 10V 200MW 3MPAK
* Menge
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- Hersteller :
- Rochester Electronics
- Produktkategorie :
- Dioden - Zener - Single
- Current - Reverse Leakage @ Vr :
- 2 µA @ 7 V
- Impedance (Max) (Zzt) :
- 30 Ohms
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Part Status :
- Active
- Power - Max :
- 200 mW
- Supplier Device Package :
- 3-MPAK
- Tolerance :
- ±2.1%
- Voltage - Forward (Vf) (Max) @ If :
- -
- Voltage - Zener (Nom) (Vz) :
- 10 V
- Datenblätter
- HZM10NB1TR-E
Herstellerbezogene Produkte
Katalogbezogene Produkte
Verwandte Produkte
| Teil | Hersteller | Aktie | Beschreibung |
|---|---|---|---|
| HZM10NB1JTL | Rochester Electronics | 50,000 | DIODE ZENER 10V 200MW 3MPAK |
| HZM10NB1JTL-E | Rochester Electronics | 540,000 | DIODE ZENER |
| HZM10NB1TL-E | Rochester Electronics | 120,000 | DIODE ZENER 10V 0.2W |
| HZM10NB2JTL-E | Rochester Electronics | 50,000 | DIODE ZENER |
| HZM10NB2JTR-E | Rochester Electronics | 50,000 | DIODE ZENER |
| HZM10NB2TL-E | Rochester Electronics | 120,000 | DIODE ZENER 10V 200MW 3MPAK |
| HZM10NB2TR-E | Rochester Electronics | 510,000 | HZM10N - ZENER DIODE, 9.99V, 2.2 |
| HZM10NB3TL-E | Rochester Electronics | 300,000 | DIODE ZENER 10V 0.2W |
| HZM10NB3TR-E | Rochester Electronics | 330,000 | DIODE ZENER 10V 0.2W |
| HZM11NB1JTL-E | Rochester Electronics | 120,000 | DIODE ZENER |
| HZM12NB2-90TR-E | Rochester Electronics | 390,000 | DIODE ZENER |
| HZM12NB2JTR | Rochester Electronics | 353,740 | DIODE ZENER |
| HZM12NB2JTR-E | Rochester Electronics | 330,000 | DIODE ZENER |
| HZM12NB2TL-E | Rochester Electronics | 480,000 | HZM12NB - ZENER DIODE |
| HZM12NB2TR-E | Rochester Electronics | 300,000 | DIODE ZENER |
