ZXTDBM832TA

Hersteller :

Diodes Incorporated

Produktkategorie :

Transistoren - Bipolar (BJT) - Arrays

Current - Collector (Ic) (Max) :

4.5A

Current - Collector Cutoff (Max) :

25nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2A, 2V

Frequency - Transition :

140MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-VDFN Exposed Pad

Part Status :

Obsolete

Power - Max :

1.7W

Supplier Device Package :

8-MLP (3x2)

Transistor Type :

2 NPN (Dual)

Vce Saturation (Max) @ Ib, Ic :

270mV @ 125mA, 4.5A

Voltage - Collector Emitter Breakdown (Max) :

20V