EMD4T2R
- Herst.Teilenummer
- EMD4T2R
- Hersteller
- ROHM Semiconductor
- Paket/Fall
- -
- Datenblatt
- Download
- Beschreibung
- TRANS NPN/PNP PREBIAS 0.15W EMT6
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- Hersteller :
- ROHM Semiconductor
- Produktkategorie :
- Transistoren - Bipolar (BJT) - Arrays, vorgespannt
- Current - Collector (Ic) (Max) :
- 100mA
- Current - Collector Cutoff (Max) :
- 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 68 @ 5mA, 5V
- Frequency - Transition :
- 250MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- SOT-563, SOT-666
- Part Status :
- Active
- Power - Max :
- 150mW
- Resistor - Base (R1) :
- 47kOhms, 10kOhms
- Resistor - Emitter Base (R2) :
- 47kOhms
- Supplier Device Package :
- EMT6
- Transistor Type :
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500µA, 10mA / 300mV @ 250µA, 5mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Datenblätter
- EMD4T2R
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