BU808DFI

Herst.Teilenummer
BU808DFI
Hersteller
STMicroelectronics
Paket/Fall
-
Datenblatt
Download
Beschreibung
TRANS NPN DARL 700V ISOWATT218
* Menge

Fordern Sie ein Angebot an (RFQ)

* Kontaktname:
* Gesellschaft:
* Email:
* Telefon:
* Kommentar:
* Captcha:
loading...
Hersteller :
STMicroelectronics
Produktkategorie :
Transistoren - Bipolar (BJT) - Single
Current - Collector (Ic) (Max) :
8 A
Current - Collector Cutoff (Max) :
400µA
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 5A, 5V
Frequency - Transition :
-
Mounting Type :
Through Hole
Operating Temperature :
150°C (TJ)
Package / Case :
ISOWATT-218-3
Part Status :
Obsolete
Power - Max :
52 W
Supplier Device Package :
ISOWATT-218
Transistor Type :
NPN - Darlington
Vce Saturation (Max) @ Ib, Ic :
1.6V @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max) :
700 V
Datenblätter
BU808DFI

Herstellerbezogene Produkte

Katalogbezogene Produkte

Verwandte Produkte

Teil Hersteller Aktie Beschreibung
BU804 WEC 50,000 BU804
BU8040GSW-E2 ROHM Semiconductor 50,000 IC LSI IR REMOTE CTRL BGA
BU806 NTE Electronics, Inc. 50,000 TRANS NPN 200V 8A TO220-3
BU806 STMicroelectronics 50,000 TRANS NPN DARL 200V 8A TO-220
BU806 onsemi 50,000 TRANS NPN DARL 200V 8A TO-220
BU806 PBFREE Central Semiconductor 50,000 THROUGH-HOLE TRANSISTOR BIPOLAR
BU807 STMicroelectronics 50,000 TRANS NPN DARL 150V 8A TO-220
BU807 onsemi 50,000 TRANS NPN DARL 150V 8A TO-220
BU807 Central Semiconductor 50,000 TRANS NPN 150V 8A DARL TO-220
BU807TU onsemi 50,000 TRANS NPN DARL 150V 8A TO-220