TDTC114E,LM

Hersteller :

Toshiba Electronic Devices and Storage Corporation

Produktkategorie :

Transistoren - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA, 5V

Frequency - Transition :

250 MHz

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Part Status :

Active

Power - Max :

320 mW

Resistor - Base (R1) :

10 kOhms

Resistor - Emitter Base (R2) :

10 kOhms

Supplier Device Package :

SOT-23-3

Transistor Type :

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500µA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

50 V