SI9926DY

Hersteller :

Rochester Electronics

Produktkategorie :

Transistoren - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

6.5A (Ta)

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Part Status :

Active

Power - Max :

900mW (Ta)

Rds On (Max) @ Id, Vgs :

30mOhm @ 6.5A, 4.5V

Supplier Device Package :

8-SOIC

Vgs(th) (Max) @ Id :

1.5V @ 250µA