FDMQ8403

Hersteller :

Rochester Electronics

Produktkategorie :

Transistoren - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

3.1A

Drain to Source Voltage (Vdss) :

100V

FET Feature :

Standard

FET Type :

4 N-Channel (H-Bridge)

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

215pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

12-WDFN Exposed Pad

Part Status :

Active

Power - Max :

1.9W

Rds On (Max) @ Id, Vgs :

110mOhm @ 3A, 10V

Supplier Device Package :

12-MLP (5x4.5)

Vgs(th) (Max) @ Id :

4V @ 250µA