SI4814BDY-T1-E3

Herst.Teilenummer
SI4814BDY-T1-E3
Hersteller
Vishay
Paket/Fall
-
Datenblatt
Download
Beschreibung
MOSFET 2N-CH 30V 10A 8SOIC
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Hersteller :
Vishay
Produktkategorie :
Transistoren - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C :
10A, 10.5A
Drain to Source Voltage (Vdss) :
30V
FET Feature :
Logic Level Gate
FET Type :
2 N-Channel (Half Bridge)
Gate Charge (Qg) (Max) @ Vgs :
10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
-
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Part Status :
Obsolete
Power - Max :
3.3W, 3.5W
Rds On (Max) @ Id, Vgs :
18mOhm @ 10A, 10V
Supplier Device Package :
8-SOIC
Vgs(th) (Max) @ Id :
3V @ 250µA
Datenblätter
SI4814BDY-T1-E3

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