IRF3205PBF

Herst.Teilenummer
IRF3205PBF
Hersteller
Infineon Technologies
Paket/Fall
-
Datenblatt
Download
Beschreibung
MOSFET N-CH 55V 110A TO220AB
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Hersteller :
Infineon Technologies
Produktkategorie :
Transistoren - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
110A (Tc)
Drain to Source Voltage (Vdss) :
55 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
3247 pF @ 25 V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
TO-220-3
Part Status :
Active
Power Dissipation (Max) :
200W (Tc)
Rds On (Max) @ Id, Vgs :
8mOhm @ 62A, 10V
Supplier Device Package :
TO-220AB
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 250µA
Datenblätter
IRF3205PBF

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