NDS9430

Hersteller :

Rochester Electronics

Produktkategorie :

Transistoren - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

5.3A (Ta)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

14 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

528 pF @ 15 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Part Status :

Obsolete

Power Dissipation (Max) :

2.5W (Ta)

Rds On (Max) @ Id, Vgs :

60mOhm @ 5.3A, 10V

Supplier Device Package :

8-SOIC

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 250µA