FDS2070N3

Hersteller :

Rochester Electronics

Produktkategorie :

Transistoren - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

4.1A (Ta)

Drain to Source Voltage (Vdss) :

150 V

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

53 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1884 pF @ 75 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Part Status :

Obsolete

Power Dissipation (Max) :

3W (Ta)

Rds On (Max) @ Id, Vgs :

78mOhm @ 4.1A, 10V

Supplier Device Package :

8-SO

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA