SSM6J216FE,LF
- Herst.Teilenummer
- SSM6J216FE,LF
- Paket/Fall
- -
- Datenblatt
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- Beschreibung
- MOSFET P-CHANNEL 12V 4.8A ES6
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- Hersteller :
- Toshiba Electronic Devices and Storage Corporation
- Produktkategorie :
- Transistoren - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 4.8A (Ta)
- Drain to Source Voltage (Vdss) :
- 12 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 1.5V, 4.5V
- FET Feature :
- -
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 12.7 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1040 pF @ 12 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C
- Package / Case :
- SOT-563, SOT-666
- Part Status :
- Active
- Power Dissipation (Max) :
- 700mW (Ta)
- Rds On (Max) @ Id, Vgs :
- 32mOhm @ 3.5A, 4.5V
- Supplier Device Package :
- ES6
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±8V
- Vgs(th) (Max) @ Id :
- 1V @ 1mA
- Datenblätter
- SSM6J216FE,LF
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