TSM600N25ECH C5G

Hersteller :

Taiwan Semiconductor

Produktkategorie :

Transistoren - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

8A (Tc)

Drain to Source Voltage (Vdss) :

250 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

8.4 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

423 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Part Status :

Active

Power Dissipation (Max) :

52W (Tc)

Rds On (Max) @ Id, Vgs :

600mOhm @ 4A, 10V

Supplier Device Package :

TO-251 (IPAK)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 250µA