IRF224
- Herst.Teilenummer
- IRF224
- Hersteller
- Rochester Electronics
- Paket/Fall
- -
- Datenblatt
- Download
- Beschreibung
- N-CHANNEL HERMETIC MOS HEXFET
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- Hersteller :
- Rochester Electronics
- Produktkategorie :
- Transistoren - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- -
- Drain to Source Voltage (Vdss) :
- -
- Drive Voltage (Max Rds On, Min Rds On) :
- -
- FET Feature :
- -
- FET Type :
- -
- Gate Charge (Qg) (Max) @ Vgs :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- -
- Mounting Type :
- -
- Operating Temperature :
- -
- Package / Case :
- -
- Part Status :
- Active
- Power Dissipation (Max) :
- -
- Rds On (Max) @ Id, Vgs :
- -
- Supplier Device Package :
- -
- Technology :
- -
- Vgs (Max) :
- -
- Vgs(th) (Max) @ Id :
- -
- Datenblätter
- IRF224
Herstellerbezogene Produkte
Katalogbezogene Produkte
Verwandte Produkte
Teil | Hersteller | Aktie | Beschreibung |
---|---|---|---|
IRF200B211 | Infineon Technologies | 50,000 | MOSFET N-CH 200V 12A TO220AB |
IRF200P222 | Infineon Technologies | 50,000 | MOSFET N-CH 200V 182A TO247AC |
IRF200P223 | Infineon Technologies | 50,000 | MOSFET N-CH 200V 100A TO247AC |
IRF200S234 | Infineon Technologies | 50,000 | MOSFET N-CH 200V 90A D2PAK |
IRF200S234 | Rochester Electronics | 50,000 | IRF200S - 12V-300V N-CHANNEL POW |
IRF214 | Rochester Electronics | 50,000 | IRF214 |
IRF2204LPBF | Infineon Technologies | 50,000 | MOSFET N-CH 40V 170A TO262 |
IRF2204PBF | Infineon Technologies | 50,000 | MOSFET N-CH 40V 210A TO220AB |
IRF2204SPBF | Infineon Technologies | 50,000 | MOSFET N-CH 40V 170A D2PAK |
IRF221 | Rochester Electronics | 50,000 | N-CHANNEL HERMETIC MOS HEXFET |
IRF223 | Rochester Electronics | 50,000 | N-CHANNEL POWER MOSFET |
IRF225 | Rochester Electronics | 50,000 | N-CHANNEL HERMETIC MOS HEXFET |
IRF230 | Rochester Electronics | 50,000 | MOSFET N-CH 200V 9A TO3 |
IRF231 | Rochester Electronics | 12,340 | N-CHANNEL POWER MOSFET |
IRF232 | Rochester Electronics | 50,000 | N-CHANNEL POWER MOSFET |