HAF2001-90-E

Herst.Teilenummer
HAF2001-90-E
Hersteller
Rochester Electronics
Paket/Fall
-
Datenblatt
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Beschreibung
N-CHANNEL POWER MOSFET
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Hersteller :
Rochester Electronics
Produktkategorie :
Transistoren - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
-
Drain to Source Voltage (Vdss) :
-
Drive Voltage (Max Rds On, Min Rds On) :
-
FET Feature :
-
FET Type :
-
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
-
Mounting Type :
-
Operating Temperature :
-
Package / Case :
-
Part Status :
Active
Power Dissipation (Max) :
-
Rds On (Max) @ Id, Vgs :
-
Supplier Device Package :
-
Technology :
-
Vgs (Max) :
-
Vgs(th) (Max) @ Id :
-
Datenblätter
HAF2001-90-E

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