HAF2001-90-E
- Herst.Teilenummer
- HAF2001-90-E
- Hersteller
- Rochester Electronics
- Paket/Fall
- -
- Datenblatt
- Download
- Beschreibung
- N-CHANNEL POWER MOSFET
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- Hersteller :
- Rochester Electronics
- Produktkategorie :
- Transistoren - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- -
- Drain to Source Voltage (Vdss) :
- -
- Drive Voltage (Max Rds On, Min Rds On) :
- -
- FET Feature :
- -
- FET Type :
- -
- Gate Charge (Qg) (Max) @ Vgs :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- -
- Mounting Type :
- -
- Operating Temperature :
- -
- Package / Case :
- -
- Part Status :
- Active
- Power Dissipation (Max) :
- -
- Rds On (Max) @ Id, Vgs :
- -
- Supplier Device Package :
- -
- Technology :
- -
- Vgs (Max) :
- -
- Vgs(th) (Max) @ Id :
- -
- Datenblätter
- HAF2001-90-E
Herstellerbezogene Produkte
Katalogbezogene Produkte
Verwandte Produkte
Teil | Hersteller | Aktie | Beschreibung |
---|---|---|---|
HAF2012-92L | Rochester Electronics | 38,810 | N-CHANNEL POWER MOSFET |
HAF2015RJ-EL-E | Renesas Electronics Corporation | 25,000 | ABU / MOSFET |
HAF2026RJ-EL-E | Renesas Electronics Corporation | 25,000 | ABU / MOSFET |