NP83P04PDG-E1-AY

Hersteller :

Renesas Electronics Corporation

Produktkategorie :

Transistoren - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

83A (Tc)

Drain to Source Voltage (Vdss) :

40 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

200 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

9820 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Part Status :

Active

Power Dissipation (Max) :

-

Rds On (Max) @ Id, Vgs :

5.3mOhm @ 41.5A, 10V

Supplier Device Package :

TO-263

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

2.5V @ 1mA