RRS100P03HZGTB

Hersteller :

ROHM Semiconductor

Produktkategorie :

Transistoren - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

10A (Ta)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

39 nC @ 5 V

Input Capacitance (Ciss) (Max) @ Vds :

3600 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Part Status :

Active

Power Dissipation (Max) :

2W (Ta)

Rds On (Max) @ Id, Vgs :

12.6mOhm @ 10A, 10V

Supplier Device Package :

8-SOP

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 1mA