TK16E60W,S1VX
- Herst.Teilenummer
- TK16E60W,S1VX
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- Beschreibung
- MOSFET N-CH 600V 15.8A TO220
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- Hersteller :
- Toshiba Electronic Devices and Storage Corporation
- Produktkategorie :
- Transistoren - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 15.8A (Ta)
- Drain to Source Voltage (Vdss) :
- 600 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- Super Junction
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 38 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1350 pF @ 300 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-220-3
- Part Status :
- Active
- Power Dissipation (Max) :
- 130W (Tc)
- Rds On (Max) @ Id, Vgs :
- 190mOhm @ 7.9A, 10V
- Supplier Device Package :
- TO-220
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 3.7V @ 790µA
- Datenblätter
- TK16E60W,S1VX
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