SI8809EDB-T2-E1

Hersteller :

Vishay

Produktkategorie :

Transistoren - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

1.94 (Ta)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 4.5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

15 nC @ 8 V

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

4-XFBGA

Part Status :

Obsolete

Power Dissipation (Max) :

500mW (Ta)

Rds On (Max) @ Id, Vgs :

90mOhm @ 1.5A, 4.5V

Supplier Device Package :

4-Microfoot

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

900mV @ 250µA