SIR330DP-T1-GE3

Herst.Teilenummer
SIR330DP-T1-GE3
Hersteller
Vishay
Paket/Fall
-
Datenblatt
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Beschreibung
MOSFET N-CH 30V 35A PPAK SO-8
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Hersteller :
Vishay
Produktkategorie :
Transistoren - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
35A (Tc)
Drain to Source Voltage (Vdss) :
30 V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
1300 pF @ 15 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
PowerPAK® SO-8
Part Status :
Obsolete
Power Dissipation (Max) :
5W (Ta), 27.7W (Tc)
Rds On (Max) @ Id, Vgs :
5.6mOhm @ 10A, 10V
Supplier Device Package :
PowerPAK® SO-8
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Datenblätter
SIR330DP-T1-GE3

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