NXH35C120L2C2S1G

Herst.Teilenummer
NXH35C120L2C2S1G
Hersteller
onsemi
Paket/Fall
-
Datenblatt
Download
Beschreibung
IGBT MOD 1200V 35A 26DIP
* Menge

Fordern Sie ein Angebot an (RFQ)

* Kontaktname:
* Gesellschaft:
* Email:
* Telefon:
* Kommentar:
* Captcha:
loading...
Hersteller :
onsemi
Produktkategorie :
Transistoren - IGBTs - Module
Configuration :
Three Phase Inverter with Brake
Current - Collector (Ic) (Max) :
35 A
Current - Collector Cutoff (Max) :
250 µA
IGBT Type :
-
Input :
Three Phase Bridge Rectifier
Input Capacitance (Cies) @ Vce :
8.33 nF @ 20 V
Mounting Type :
Through Hole
NTC Thermistor :
Yes
Operating Temperature :
-40°C ~ 150°C (TJ)
Part Status :
Active
Power - Max :
20 mW
Supplier Device Package :
26-DIP
Vce(on) (Max) @ Vge, Ic :
2.4V @ 15V, 35A
Voltage - Collector Emitter Breakdown (Max) :
1200 V
Datenblätter
NXH35C120L2C2S1G

Herstellerbezogene Produkte

Katalogbezogene Produkte

Verwandte Produkte

Teil Hersteller Aktie Beschreibung
NXH350N100H4Q2F2P1G onsemi 50,000 IC PWR MODULE 1000V 350A PIM42
NXH350N100H4Q2F2PG onsemi 50,000 IC MODULE PIM 350A 1000V
NXH350N100H4Q2F2S1G onsemi 50,000 IC PWR MODULE 1000V 350A PIM42
NXH350N100H4Q2F2SG onsemi 50,000 IC MODULE PIM 350A 1000V
NXH35C120L2C2ESG onsemi 50,000 IGBT MODULE, CIB 1200 V, 35 A IG
NXH35C120L2C2SG onsemi 50,000 IGBT MODULE, CIB 1200 V, 35 A IG
NXH3670ADK NXP Semiconductors 50,000 NXH3670ADK
NXH3670SDKUL NXP Semiconductors 50,000 NXH3670SDK
NXH3670UK/A1Z NXP Semiconductors 15,150 IC MCU BLE HEADPHONE AUDIO WLCSP