HGTD3N60C3S9A

Hersteller :

onsemi

Produktkategorie :

Transistoren - IGBTs - Single

Current - Collector (Ic) (Max) :

6 A

Current - Collector Pulsed (Icm) :

24 A

Gate Charge :

10.8 nC

IGBT Type :

-

Input Type :

Standard

Mounting Type :

Surface Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Part Status :

Obsolete

Power - Max :

33 W

Reverse Recovery Time (trr) :

-

Supplier Device Package :

TO-252AA

Switching Energy :

85µJ (on), 245µJ (off)

Td (on/off) @ 25°C :

-

Test Condition :

480V, 3A, 82Ohm, 15V

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 3A

Voltage - Collector Emitter Breakdown (Max) :

600 V