MBT35200MT1G

Fabricant :

onsemi

catégorie de produit :

Transistors - Bipolaire (BJT) - Simple

Current - Collector (Ic) (Max) :

2 A

Current - Collector Cutoff (Max) :

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1.5A, 1.5V

Frequency - Transition :

100MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Part Status :

Active

Power - Max :

625 mW

Supplier Device Package :

6-TSOP

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

310mV @ 20mA, 2A

Voltage - Collector Emitter Breakdown (Max) :

35 V