- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Current - Collector (Ic) (Max) :
- 100mA
- Current - Collector Cutoff (Max) :
- 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 5mA, 10V
- Frequency - Transition :
- -
- Mounting Type :
- Surface Mount
- Package / Case :
- SOT-553
- Part Status :
- Active
- Power - Max :
- 500mW
- Resistor - Base (R1) :
- 22kOhms
- Resistor - Emitter Base (R2) :
- 22kOhms
- Supplier Device Package :
- SOT-553
- Transistor Type :
- 1 NPN, 1 PNP - Pre - Biased (Base-Collector Junction)
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 300µA, 10mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Datasheets
- NSVEMC2DXV5T1G
Manufacturer related products
Catalog related products
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| NSVED07I3266BL | Panduit Corporation | 5,000,000 | VERTICAL EXHAUST DUCT (VED) FOR |
| NSVEMD4DXV6T5G | onsemi | 50,000 | TRANS NPN/PNP DUAL BRT SOT563 |
| NSVEMD4DXV6T5G | Rochester Electronics | 960,000 | NSVEMD4 - COMPLEMENTARY BIPOLAR |
| NSVEMT1DXV6T1G | onsemi | 30,000 | TRANS 2PNP 60V 0.1A SOT563 |
| NSVEMT1DXV6T5G | onsemi | 80,000 | TRANS 2PNP 60V 0.1A SOT563 |
| NSVEMX1DXV6T1G | onsemi | 50,000 | TRANS 2NPN 50V 0.1A SOT563 |