TSM200N03DPQ33 RGG

Manufacturer :

Taiwan Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

20A (Tc)

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

345pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerWDFN

Part Status :

Active

Power - Max :

20W

Rds On (Max) @ Id, Vgs :

20mOhm @ 10A, 10V

Supplier Device Package :

8-PDFN (3x3)

Vgs(th) (Max) @ Id :

2.5V @ 250µA