BQ4010MA-200

Производитель :

Rochester Electronics

категория продукта :

объем памяти

Access Time :

200 ns

Clock Frequency :

-

Memory Format :

NVSRAM

Memory Interface :

Parallel

Memory Size :

64Kb (8K x 8)

Memory Type :

Non-Volatile

Mounting Type :

Through Hole

Operating Temperature :

0°C ~ 70°C (TA)

Part Status :

Obsolete

Supplier Device Package :

28-DIP Module (18.42x37.72)

Technology :

NVSRAM (Non-Volatile SRAM)

Voltage - Supply :

4.75V ~ 5.5V

Write Cycle Time - Word, Page :

200ns