EMX51T2R

Производитель :

ROHM Semiconductor

категория продукта :

Транзисторы - Биполярные (BJT) - Массивы

Current - Collector (Ic) (Max) :

200mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA, 2V

Frequency - Transition :

400MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SOT-563, SOT-666

Part Status :

Active

Power - Max :

150mW

Supplier Device Package :

EMT6

Transistor Type :

2 NPN (Dual)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA

Voltage - Collector Emitter Breakdown (Max) :

20V