EMT52T2R

Производитель :

ROHM Semiconductor

категория продукта :

Транзисторы - Биполярные (BJT) - Массивы

Current - Collector (Ic) (Max) :

100mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA, 6V

Frequency - Transition :

300MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SOT-563, SOT-666

Part Status :

Active

Power - Max :

150mW

Supplier Device Package :

EMT6

Transistor Type :

2 PNP (Dual)

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

Voltage - Collector Emitter Breakdown (Max) :

50V