DSS4160FDB-7

Производитель :

Diodes Incorporated

категория продукта :

Транзисторы - Биполярные (BJT) - Массивы

Current - Collector (Ic) (Max) :

1A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 500mA, 2V

Frequency - Transition :

175MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-UDFN Exposed Pad

Part Status :

Active

Power - Max :

405mW

Supplier Device Package :

U-DFN2020-6 (Type B)

Transistor Type :

2 NPN (Dual)

Vce Saturation (Max) @ Ib, Ic :

240mV @ 50mA, 1A

Voltage - Collector Emitter Breakdown (Max) :

60V