RN1703,LF
- Изготовитель Деталь №
- RN1703,LF
- Производитель
- Toshiba Electronic Devices and Storage Corporation
- Пакет/Чехол
- -
- Техническая спецификация
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- Описание
- NPNX2 BRT Q1BSR22KOHM Q1BER22KOH
* Количество
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- Производитель :
- Toshiba Electronic Devices and Storage Corporation
- категория продукта :
- Транзисторы - биполярные (BJT) - массивы, предварительно смещенные
- Current - Collector (Ic) (Max) :
- 100mA
- Current - Collector Cutoff (Max) :
- 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 10mA, 5V
- Frequency - Transition :
- 250MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- 5-TSSOP, SC-70-5, SOT-353
- Part Status :
- Active
- Power - Max :
- 200mW
- Resistor - Base (R1) :
- 22kOhms
- Resistor - Emitter Base (R2) :
- 22kOhms
- Supplier Device Package :
- USV
- Transistor Type :
- 2 NPN - Pre-Biased (Dual)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 250µA, 5mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Спецификации
- RN1703,LF
Товары, связанные с производителем
Каталог сопутствующих товаров
Сопутствующие товары
| Часть | Производитель | Запас | Описание |
|---|---|---|---|
| RN1701,LF | Toshiba Electronic Devices and Storage Corporation | 73,770 | NPNX2 BRT Q1BSR4.7KOHM Q1BER4.7K |
| RN1701JE(TE85L,F) | Toshiba Electronic Devices and Storage Corporation | 50,000 | TRANS 2NPN PREBIAS 0.1W ESV |
| RN1702,LF | Toshiba Electronic Devices and Storage Corporation | 50,000 | NPNX2 BRT Q1BSR10KOHM Q1BER10KOH |
| RN1702JE(TE85L,F) | Toshiba Electronic Devices and Storage Corporation | 37,290 | TRANS 2NPN PREBIAS 0.1W ESV |
| RN1703JE(TE85L,F) | Toshiba Electronic Devices and Storage Corporation | 50,000 | TRANS 2NPN PREBIAS 0.1W ESV |
| RN1704,LF | Toshiba Electronic Devices and Storage Corporation | 58,900 | NPNX2 BRT Q1BSR47KOHM Q1BER47KOH |
| RN1704JE(TE85L,F) | Toshiba Electronic Devices and Storage Corporation | 50,000 | TRANS 2NPN PREBIAS 0.1W ESV |
| RN1705,LF | Toshiba Electronic Devices and Storage Corporation | 28,880 | NPNX2 BRT Q1BSR2.2KOHM Q1BER47KO |
| RN1705JE(TE85L,F) | Toshiba Electronic Devices and Storage Corporation | 12,570 | TRANS 2NPN PREBIAS 0.1W ESV |
| RN1706,LF | Toshiba Electronic Devices and Storage Corporation | 60,000 | NPNX2 BRT Q1BSR4.7KOHM Q1BER47KO |
| RN1706JE(TE85L,F) | Toshiba Electronic Devices and Storage Corporation | 50,000 | TRANS 2NPN PREBIAS 0.1W ESV |
| RN1707,LF | Toshiba Electronic Devices and Storage Corporation | 90,000 | NPNX2 BRT Q1BSR10KOHM Q1BER47KOH |
| RN1707JE(TE85L,F) | Toshiba Electronic Devices and Storage Corporation | 34,710 | NPN X 2 BRT, Q1BSR=10KΩ, Q1BER=4 |
| RN1708,LF | Toshiba Electronic Devices and Storage Corporation | 58,530 | NPNX2 BRT Q1BSR22KOHM Q1BER47KOH |
| RN1708JE(TE85L,F) | Toshiba Electronic Devices and Storage Corporation | 38,900 | NPN X 2 BRT, Q1BSR=22KΩ, Q1BER=4 |