PBSS2515E,115

Производитель :

NXP Semiconductors

категория продукта :

Транзисторы - Биполярные (BJT) - Одиночные

Current - Collector (Ic) (Max) :

500 mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

150 @ 100mA, 2V

Frequency - Transition :

420MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SC-75, SOT-416

Part Status :

Obsolete

Power - Max :

250 mW

Supplier Device Package :

SC-75

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

250mV @ 50mA, 500mA

Voltage - Collector Emitter Breakdown (Max) :

15 V