BC618,112

Производитель :

NXP Semiconductors

категория продукта :

Транзисторы - Биполярные (BJT) - Одиночные

Current - Collector (Ic) (Max) :

500 mA

Current - Collector Cutoff (Max) :

50µA

DC Current Gain (hFE) (Min) @ Ic, Vce :

10000 @ 200mA, 5V

Frequency - Transition :

155MHz

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Part Status :

Obsolete

Power - Max :

625 mW

Supplier Device Package :

TO-92-3

Transistor Type :

NPN - Darlington

Vce Saturation (Max) @ Ib, Ic :

1.1V @ 200µA, 200mA

Voltage - Collector Emitter Breakdown (Max) :

55 V