TSM6502CR RLG

Производитель :

Taiwan Semiconductor

категория продукта :

Транзисторы - FET, MOSFET - Массивы

Current - Continuous Drain (Id) @ 25°C :

24A (Tc), 18A (Tc)

Drain to Source Voltage (Vdss) :

60V

FET Feature :

Standard

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

10.3nC @ 4.5V, 9.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

1159pF @ 30V, 930pF @ 30V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerTDFN

Part Status :

Active

Power - Max :

40W

Rds On (Max) @ Id, Vgs :

34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V

Supplier Device Package :

8-PDFN (5x6)

Vgs(th) (Max) @ Id :

2.5V @ 250µA