DTA113EM3T5G

Производитель :

onsemi

категория продукта :

Транзисторы - биполярные (BJT) - одиночные, предварительно смещенные

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

3 @ 5mA, 10V

Frequency - Transition :

-

Mounting Type :

Surface Mount

Package / Case :

SOT-723

Part Status :

Active

Power - Max :

260 mW

Resistor - Base (R1) :

1 kOhms

Resistor - Emitter Base (R2) :

1 kOhms

Supplier Device Package :

SOT-723

Transistor Type :

PNP - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

50 V