TPD3215M

Производитель :

Transphorm

категория продукта :

Транзисторы - FET, MOSFET - Массивы

Current - Continuous Drain (Id) @ 25°C :

70A (Tc)

Drain to Source Voltage (Vdss) :

600V

FET Feature :

GaNFET (Gallium Nitride)

FET Type :

2 N-Channel (Half Bridge)

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds :

2260pF @ 100V

Mounting Type :

Through Hole

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

Module

Part Status :

Obsolete

Power - Max :

470W

Rds On (Max) @ Id, Vgs :

34mOhm @ 30A, 8V

Supplier Device Package :

Module

Vgs(th) (Max) @ Id :

-