CSD85312Q3E

Производитель :

Texas Instruments

категория продукта :

Транзисторы - FET, MOSFET - Массивы

Current - Continuous Drain (Id) @ 25°C :

39A

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate, 5V Drive

FET Type :

2 N-Channel (Dual) Common Source

Gate Charge (Qg) (Max) @ Vgs :

15.2nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

2390pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerVDFN

Part Status :

Active

Power - Max :

2.5W

Rds On (Max) @ Id, Vgs :

12.4mOhm @ 10A, 8V

Supplier Device Package :

8-VSON (3.3x3.3)

Vgs(th) (Max) @ Id :

1.4V @ 250µA