SI9933CDY-T1-E3

Производитель :

Vishay

категория продукта :

Транзисторы - FET, MOSFET - Массивы

Current - Continuous Drain (Id) @ 25°C :

4A

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

665pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-50°C ~ 150°C (TJ)

Part Status :

Active

Power - Max :

3.1W

Rds On (Max) @ Id, Vgs :

58mOhm @ 4.8A, 4.5V

Supplier Device Package :

8-SOIC

Vgs(th) (Max) @ Id :

1.4V @ 250µA