RMD0A8P20ES9

Производитель :

Rectron USA

категория продукта :

Транзисторы - FET, MOSFET - Массивы

Current - Continuous Drain (Id) @ 25°C :

800mA (Ta)

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Standard

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

1.8pC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

87pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-TSSOP, SC-88, SOT-363

Part Status :

Active

Power - Max :

800mW (Ta)

Rds On (Max) @ Id, Vgs :

1.2Ohm @ 500mA, 4.5V

Supplier Device Package :

SOT-363

Vgs(th) (Max) @ Id :

1V @ 250µA