SIS590DN-T1-GE3

Производитель :

Vishay

категория продукта :

Транзисторы - FET, MOSFET - Массивы

Current - Continuous Drain (Id) @ 25°C :

2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc)

Drain to Source Voltage (Vdss) :

100V

FET Feature :

Standard

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

PowerPAK® 1212-8 Dual

Part Status :

Active

Power - Max :

2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc)

Rds On (Max) @ Id, Vgs :

167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V

Supplier Device Package :

PowerPAK® 1212-8 Dual

Vgs(th) (Max) @ Id :

2.5V @ 250µA