DMTH6002LPS-13

Производитель :

Diodes Incorporated

категория продукта :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

100A (Tc)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

130.8 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

6555 pF @ 30 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

8-PowerTDFN

Part Status :

Active

Power Dissipation (Max) :

167W

Rds On (Max) @ Id, Vgs :

2mOhm @ 50A, 10V

Supplier Device Package :

PowerDI5060-8 (Type K)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 250µA