DMP1011UCB9-7

Производитель :

Diodes Incorporated

категория продукта :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

10A (Ta)

Drain to Source Voltage (Vdss) :

8 V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4.5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

10.5 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

1060 pF @ 4 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

9-UFBGA, WLBGA

Part Status :

Active

Power Dissipation (Max) :

890mW (Ta)

Rds On (Max) @ Id, Vgs :

10mOhm @ 2A, 4.5V

Supplier Device Package :

U-WLB1515-9

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-6V

Vgs(th) (Max) @ Id :

1.1V @ 250µA