TSM900N10CH X0G

Производитель :

Taiwan Semiconductor

категория продукта :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

15A (Tc)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

9.3 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1480 pF @ 50 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-251-3 Stub Leads, IPak

Part Status :

Active

Power Dissipation (Max) :

50W (Tc)

Rds On (Max) @ Id, Vgs :

90mOhm @ 5A, 10V

Supplier Device Package :

TO-251 (IPAK)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250µA