NTE222

Производитель :

NTE Electronics, Inc.

категория продукта :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

50mA (Tj)

Drain to Source Voltage (Vdss) :

25 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

3300 pF @ 15 V

Mounting Type :

Through Hole

Operating Temperature :

-65°C ~ 175°C (TJ)

Package / Case :

TO-206AF, TO-72-4 Metal Can

Part Status :

Active

Power Dissipation (Max) :

360mW (Ta), 1.2mW (Tc)

Rds On (Max) @ Id, Vgs :

-

Supplier Device Package :

TO-72

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

4V @ 20µA