FDT434P

Производитель :

Rochester Electronics

категория продукта :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

6A (Ta)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4.5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

19 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

1187 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Part Status :

Active

Power Dissipation (Max) :

3W (Ta)

Rds On (Max) @ Id, Vgs :

50mOhm @ 6A, 4.5V

Supplier Device Package :

SOT-223-4

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1V @ 250µA